Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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SMUN5313DW1T1G

SMUN5313DW1T1G

型号
SMUN5313DW1T1G
制造商
ON Semiconductor
描述
TRANS NPN/PNP PREBIAS SOT363
数据表
SMUN5313DW1T1G.pdf
所属分类
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
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Transistors - Bipolar (BJT) - Arrays, Pre-Biased
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SMUN5313DW1T1G

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    规格
    Part Status Active
    Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) 100mA
    Voltage - Collector Emitter Breakdown (Max) 50V
    Resistor - Base (R1) (Ohms) 47k
    Resistor - Emitter Base (R2) (Ohms) 47k
    DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
    Current - Collector Cutoff (Max) 500nA
    Frequency - Transition -
    Power - Max 187mW
    Mounting Type Surface Mount
    Package / Case 6-TSSOP, SC-88, SOT-363
    Supplier Device Package SC-88/SC70-6/SOT-363
    Shipment UPS/EMS/DHL/FedEx Express.
    Condtion New original factory.
    发送邮件
    robin.xuan@icshoping.com or 在线查询
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